2SD1383KT146B Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 5000 @ 100mA 5V DC current gain.The collector emitter saturation voltage is 1.5V, which allows for maximum design flexibility.A VCE saturation (Max) of 1.5V @ 400μA, 200mA means Ic has reached its maximum value(saturated).The base voltage of the emitter can be kept at 6V to achieve high efficiency.This device has a current rating of 300mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.Single BJT transistor contains a transSingle BJT transistorion frequency of 250MHz.Input voltage breakdown is available at 32V volts.Maximum collector currents can be below 300mA volts.
2SD1383KT146B Features
the DC current gain for this device is 5000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 400μA, 200mA
the emitter base voltage is kept at 6V
the current rating of this device is 300mA
a transition frequency of 250MHz
2SD1383KT146B Applications
There are a lot of ROHM Semiconductor 2SD1383KT146B applications of single BJT transistors.
- Muting
- Driver
- Interface
- Inverter
