2SCR512PT100 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 100mA 2V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 400mV @ 35mA, 700mA.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.Parts of this part have transition frequencies of 320MHz.In extreme cases, the collector current can be as low as 2A volts.
2SCR512PT100 Features
the DC current gain for this device is 200 @ 100mA 2V
the vce saturation(Max) is 400mV @ 35mA, 700mA
the emitter base voltage is kept at 6V
a transition frequency of 320MHz
2SCR512PT100 Applications
There are a lot of ROHM Semiconductor 2SCR512PT100 applications of single BJT transistors.
- Interface
- Muting
- Driver
- Inverter
