2SC5658T2LQ Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 120 @ 1mA 6V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 400mV, which allows maximum flexibilSingle BJT transistory in design.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 400mV @ 5mA, 50mA.Single BJT transistor is essential to maintain the continuous collector voltage at 150mA to achieve high efficiency.The base voltage of the emitter can be kept at 7V to achieve high efficiency.The current rating of this fuse is 150mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.180MHz is present in the transition frequency.This device can take an input voltage of 50V volts before it breaks down.During maximum operation, collector current can be as low as 150mA volts.
2SC5658T2LQ Features
the DC current gain for this device is 120 @ 1mA 6V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at 7V
the current rating of this device is 150mA
a transition frequency of 180MHz
2SC5658T2LQ Applications
There are a lot of ROHM Semiconductor 2SC5658T2LQ applications of single BJT transistors.
- Inverter
- Driver
- Interface
- Muting
