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2SB1707TL

2SB1707TL

2SB1707TL

ROHM Semiconductor

2SB1707TL datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

SOT-23

2SB1707TL Datasheet PDF

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Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 20 Weeks
Contact PlatingCopper, Silver, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-96
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Published 2005
JESD-609 Code e1
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
HTS Code8541.21.00.75
Subcategory Other Transistors
Voltage - Rated DC -12V
Max Power Dissipation500mW
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Current Rating-4A
[email protected] Reflow Temperature-Max (s) 10
Base Part Number 2SB1707
Pin Count3
Number of Elements 1
Element ConfigurationSingle
Transistor Application AMPLIFIER
Gain Bandwidth Product250MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 12V
Max Collector Current 4A
DC Current Gain (hFE) (Min) @ Ic, Vce 270 @ 200mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 250mV @ 40mA, 2A
Collector Emitter Breakdown Voltage12V
Max Frequency 100MHz
Transition Frequency 250MHz
Collector Emitter Saturation Voltage-150mV
Max Breakdown Voltage 12V
Collector Base Voltage (VCBO) -15V
Emitter Base Voltage (VEBO) -6V
hFE Min 270
Continuous Collector Current -4A
Height 900μm
Length 2.9mm
Width 1.6mm
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:8757 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.134628$0.134628
10$0.127008$1.27008
100$0.119818$11.9818
500$0.113036$56.518
1000$0.106638$106.638

2SB1707TL Product Details

2SB1707TL Overview


This device has a DC current gain of 270 @ 200mA 2V, which is the ratio between the collector current and the base current.With a collector emitter saturation voltage of -150mV, it offers maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Continuous collector voltage should be kept at -4A for high efficiency.Keeping the emitter base voltage at -6V allows for a high level of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -4A.In this part, there is a transition frequency of 250MHz.This device can take an input voltage of 12V volts before it breaks down.A maximum collector current of 4A volts is possible.

2SB1707TL Features


the DC current gain for this device is 270 @ 200mA 2V
a collector emitter saturation voltage of -150mV
the vce saturation(Max) is 250mV @ 40mA, 2A
the emitter base voltage is kept at -6V
the current rating of this device is -4A
a transition frequency of 250MHz

2SB1707TL Applications


There are a lot of ROHM Semiconductor 2SB1707TL applications of single BJT transistors.

  • Driver
  • Inverter
  • Interface
  • Muting

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