2SB1183TL Overview
DC current gain in this device equals 1000 @ 500mA 2V, which is the ratio of the base current to the collector current.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.5V @ 1.2mA, 600mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -2A.As a result, the part has a transition frequency of 150MHz.Collector current can be as low as 2A volts at its maximum.
2SB1183TL Features
the DC current gain for this device is 1000 @ 500mA 2V
the vce saturation(Max) is 1.5V @ 1.2mA, 600mA
the emitter base voltage is kept at 5V
the current rating of this device is -2A
a transition frequency of 150MHz
2SB1183TL Applications
There are a lot of ROHM Semiconductor 2SB1183TL applications of single BJT transistors.
- Driver
- Muting
- Inverter
- Interface
