2SAR574D3TL1 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 120 @ 100mA 3V DC current gain.When VCE saturation is 400mV @ 50mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Detection of Collector Emitter Breakdown at 80V maximal voltage is present.
2SAR574D3TL1 Features
the DC current gain for this device is 120 @ 100mA 3V
the vce saturation(Max) is 400mV @ 50mA, 1A
2SAR574D3TL1 Applications
There are a lot of ROHM Semiconductor 2SAR574D3TL1 applications of single BJT transistors.
- Interface
- Driver
- Inverter
- Muting