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2SAR574D3TL1

2SAR574D3TL1

2SAR574D3TL1

ROHM Semiconductor

2SAR574D3TL1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

SOT-23

2SAR574D3TL1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 13 Weeks
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Power - Max 10W
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 100mA 3V
Current - Collector Cutoff (Max) 1μA ICBO
Vce Saturation (Max) @ Ib, Ic 400mV @ 50mA, 1A
Voltage - Collector Emitter Breakdown (Max) 80V
Current - Collector (Ic) (Max) 2A
Frequency - Transition 280MHz
RoHS StatusROHS3 Compliant
In-Stock:8297 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.530760$0.53076
10$0.500717$5.00717
100$0.472375$47.2375
500$0.445636$222.818
1000$0.420412$420.412

2SAR574D3TL1 Product Details

2SAR574D3TL1 Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 120 @ 100mA 3V DC current gain.When VCE saturation is 400mV @ 50mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Detection of Collector Emitter Breakdown at 80V maximal voltage is present.

2SAR574D3TL1 Features


the DC current gain for this device is 120 @ 100mA 3V
the vce saturation(Max) is 400mV @ 50mA, 1A

2SAR574D3TL1 Applications


There are a lot of ROHM Semiconductor 2SAR574D3TL1 applications of single BJT transistors.

  • Interface
  • Driver
  • Inverter
  • Muting

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