2SAR522EBTL Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 120 @ 1mA 2V.This design offers maximum flexibility with a collector emitter saturation voltage of -120mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 300mV @ 10mA, 100mA.Single BJT transistor is recommended to keep the continuous collector voltage at -200mA in order to achieve high efficiency.Emitter base voltages of -5V can achieve high levels of efficiency.As a result, the part has a transition frequency of 350MHz.The breakdown input voltage is 20V volts.Collector current can be as low as 200mA volts at its maximum.
2SAR522EBTL Features
the DC current gain for this device is 120 @ 1mA 2V
a collector emitter saturation voltage of -120mV
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at -5V
a transition frequency of 350MHz
2SAR522EBTL Applications
There are a lot of ROHM Semiconductor 2SAR522EBTL applications of single BJT transistors.
- Muting
- Driver
- Interface
- Inverter
