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2SAR512RTL

2SAR512RTL

2SAR512RTL

ROHM Semiconductor

2SAR512RTL datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

SOT-23

2SAR512RTL Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 20 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-96
Number of Pins 96
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingCut Tape (CT)
Published 2013
JESD-609 Code e1
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Max Power Dissipation1W
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-G3
Number of Elements 1
Configuration SINGLE
Power - Max 1W
Transistor Application SWITCHING
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 400mV
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 100mA 2V
Current - Collector Cutoff (Max) 1μA ICBO
Vce Saturation (Max) @ Ib, Ic 400mV @ 35mA, 700mA
Collector Emitter Breakdown Voltage30V
Transition Frequency 430MHz
Max Breakdown Voltage 30V
Frequency - Transition 430MHz
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:15910 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.171057$0.171057
10$0.161374$1.61374
100$0.152240$15.224
500$0.143623$71.8115
1000$0.135493$135.493

2SAR512RTL Product Details

2SAR512RTL Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 200 @ 100mA 2V DC current gain.A VCE saturation (Max) of 400mV @ 35mA, 700mA means Ic has reached its maximum value(saturated).A transition frequency of 430MHz is present in the part.There is a breakdown input voltage of 30V volts that it can take.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.

2SAR512RTL Features


the DC current gain for this device is 200 @ 100mA 2V
the vce saturation(Max) is 400mV @ 35mA, 700mA
a transition frequency of 430MHz

2SAR512RTL Applications


There are a lot of ROHM Semiconductor 2SAR512RTL applications of single BJT transistors.

  • Inverter
  • Interface
  • Muting
  • Driver

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