2SA933ASTPQ Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 120 @ 1mA 6V.This system offers maximum design flexibility due to a collector emitter saturation voltage of -500mV.A VCE saturation (Max) of 500mV @ 5mA, 50mA means Ic has reached its maximum value(saturated).The emitter base voltage can be kept at -6V for high efficiency.This device has a current rating of -150mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.In this part, there is a transition frequency of 140MHz.Single BJT transistor can be broken down at a voltage of 50V volts.In extreme cases, the collector current can be as low as 150mA volts.
2SA933ASTPQ Features
the DC current gain for this device is 120 @ 1mA 6V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at -6V
the current rating of this device is -150mA
a transition frequency of 140MHz
2SA933ASTPQ Applications
There are a lot of ROHM Semiconductor 2SA933ASTPQ applications of single BJT transistors.
- Muting
- Inverter
- Driver
- Interface
