2SA2007E Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 320 @ 2A 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -300mV, which allows maximum flexibilSingle BJT transistory in design.A VCE saturation (Max) of 500mV @ 400mA, 8A means Ic has reached its maximum value(saturated).Continuous collector voltage should be kept at -12A for high efficiency.An emitter's base voltage can be kept at -5V to gain high efficiency.During maximum operation, collector current can be as low as 12A volts.
2SA2007E Features
the DC current gain for this device is 320 @ 2A 2V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 500mV @ 400mA, 8A
the emitter base voltage is kept at -5V
2SA2007E Applications
There are a lot of ROHM Semiconductor 2SA2007E applications of single BJT transistors.
- Inverter
- Muting
- Driver
- Interface
