MSD42SWT1 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 25 @ 1mA 10V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 2mA, 200mA.Detection of Collector Emitter Breakdown at 300V maximal voltage is present.
MSD42SWT1 Features
the DC current gain for this device is 25 @ 1mA 10V
the vce saturation(Max) is 500mV @ 2mA, 200mA
MSD42SWT1 Applications
There are a lot of Rochester Electronics, LLC MSD42SWT1 applications of single BJT transistors.
- Inverter
- Interface
- Muting
- Driver
