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IRGS10B60KDTRLP

IRGS10B60KDTRLP

IRGS10B60KDTRLP

Rochester Electronics, LLC

IGBT WITH RECOVERY DIODE

SOT-23

IRGS10B60KDTRLP Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package D2PAK
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Input Type Standard
Power - Max 156W
Reverse Recovery Time 90ns
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 22A
Test Condition 400V, 10A, 47Ohm, 15V
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 10A
IGBT Type NPT
Gate Charge38nC
Current - Collector Pulsed (Icm) 44A
Td (on/off) @ 25°C 30ns/230ns
Switching Energy 140μJ (on), 250μJ (off)
RoHS StatusNon-RoHS Compliant
In-Stock:2985 items

About IRGS10B60KDTRLP

The IRGS10B60KDTRLP from Rochester Electronics, LLC is a high-performance microcontroller designed for a wide range of embedded applications. This component features IGBT WITH RECOVERY DIODE.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IRGS10B60KDTRLP, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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