HIP2101EIBT Overview
In order to increase flexibility, the package 8-SOIC (0.154, 3.90mm Width) Exposed Pad is used.A packaging method of Tape & Reel (TR) is used.This device is equipped with 2 drivers for its configuration.There is a mounting bracket in the way of Surface Mount.When the supply voltage is 9V~14V it is able to demonstrate its superiority.N-Channel MOSFET is the gate type used for this design.This device is allowed to operate in a temperature range of -55°C~150°C TJ.Non-Inverting is used as its input type.Initially, the configuration is composed of 8 terminations.A voltage of 12V is required for its operation.The number of component pins is 8.Mosfet driver is possible to set the high-side voltage - Max (Bootstrap) to 114V.
HIP2101EIBT Features
Embedded in the Tape & Reel (TR) package
2 drivers
Employing a gate type of N-Channel MOSFET
High-side voltage - Max (Bootstrap) of 114V
HIP2101EIBT Applications
There are a lot of Rochester Electronics, LLC HIP2101EIBT gate drivers applications.
- Driving GaN Power Transistors used in Full or Half?Bridge, LLC,
- Automotive Applications
- High power buffers
- High-voltage isolated DC-DC converters
- Commercial and agricultural vehicles (CAV)
- Telecom switch mode power supplies
- Motor Controls
- Portable Media Players
- Industrial Motor Inverter - Power Tools, Robotics
- Isolated Gate Driver Supplies
