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BF493S

BF493S

BF493S

Rochester Electronics, LLC

BF493S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website

SOT-23

BF493S Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Surface MountNO
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingBulk
JESD-609 Code e0
Pbfree Code no
Part StatusObsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 3
Terminal Finish TIN LEAD
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 240
[email protected] Reflow Temperature-Max (s) 30
Pin Count3
JESD-30 Code O-PBCY-T3
Qualification StatusCOMMERCIAL
Number of Elements 1
Configuration SINGLE
Power - Max 625mW
Transistor Application AMPLIFIER
Polarity/Channel Type PNP
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 10mA 10V
Current - Collector Cutoff (Max) 10nA
Vce Saturation (Max) @ Ib, Ic 2V @ 2mA, 20mA
Voltage - Collector Emitter Breakdown (Max) 350V
Current - Collector (Ic) (Max) 500mA
Transition Frequency 50MHz
Frequency - Transition 50MHz
RoHS StatusNon-RoHS Compliant
In-Stock:3333 items

BF493S Product Details

BF493S Overview


This device has a DC current gain of 40 @ 10mA 10V, which is the ratio between the collector current and the base current.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 2V @ 2mA, 20mA.Single BJT transistor contains a transSingle BJT transistorion frequency of 50MHz.A 350V maximal voltage - Collector Emitter Breakdown is present in the device.

BF493S Features


the DC current gain for this device is 40 @ 10mA 10V
the vce saturation(Max) is 2V @ 2mA, 20mA
a transition frequency of 50MHz

BF493S Applications


There are a lot of Rochester Electronics, LLC BF493S applications of single BJT transistors.

  • Driver
  • Muting
  • Interface
  • Inverter

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