HIP6603BECB Overview
In order to increase flexibility, the package 8-SOIC (0.154, 3.90mm Width) Exposed Pad is used.A packaging method of Tube is used.A total of 2 drivers are integrated into its configuration.Surface Mount is the way in which it is mounted.WGate driversh a 10.8V~13.2V supply voltage, gate drivers is able to demonstrate Gate driverss superiorGate driversy.This device is designed with a N-Channel MOSFET gate type.This device is allowed to operate in a temperature range of 0°C~125°C TJ.Mosfet driver uses Non-Inverting as Mosfet drivers input type.The configuration is based on 8 terminations.Numerous related parts can be found under its base part number HIP6603B.A voltage of 12V is required for its operation.Mosfet driver is possible for the high-side voltage - Max (Bootstrap) to be as low as 15V.
HIP6603BECB Features
Embedded in the Tube package
2 drivers
Employing a gate type of N-Channel MOSFET
High-side voltage - Max (Bootstrap) of 15V
HIP6603BECB Applications
There are a lot of Renesas Electronics America Inc. HIP6603BECB gate drivers applications.
- Power factor correction (PFC) circuits
- High frequency line drivers
- Head-up and Head mounted displays
- Active Clamp Flyback or Forward and Synchronous Rectifier
- Portable computers
- Multicolor LED/laser displays
- High-voltage isolated DC-DC converters
- Commercial and agricultural vehicles (CAV)
- Dual-Battery Systems
- Industrial motor drives - compact, standard, premium, servo drives
