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7164S35TDB

7164S35TDB

7164S35TDB

Renesas Electronics America Inc.

Memory IC

SOT-23

7164S35TDB Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 15 Weeks
Mounting Type Through Hole
Package / Case 28-CDIP (0.300, 7.62mm)
Operating Temperature-55°C~125°C TA
PackagingTube
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology SRAM - Asynchronous
Voltage - Supply 4.5V~5.5V
Memory Size64Kb 8K x 8
Memory TypeVolatile
Memory Format SRAM
Memory InterfaceParallel
Write Cycle Time - Word, Page 35ns
RoHS StatusNon-RoHS Compliant
In-Stock:323 items

Pricing & Ordering

QuantityUnit PriceExt. Price
169$18.33408$3098.45952

7164S35TDB Product Details

7164S35TDB Overview


In this case, the memory type of the device can be classified as Volatile. The case comes in Tube size. The file is embedded in a 28-CDIP (0.300, 7.62mm) case. On the chip, there is an 64Kb 8K x 8 memory, which is the size of the chip's memory. This device uses takes advantage of the SRAM format. Due to its extended operating temperature range, the device is well suited for a wide range of demanding applications. With 4.5V~5.5V as the supply voltage, it is capable of handling memory ics. There is a recommended mounting type of Through Hole for it.

7164S35TDB Features


Package / Case: 28-CDIP (0.300, 7.62mm)

7164S35TDB Applications


There are a lot of Renesas Electronics America Inc. 7164S35TDB Memory applications.

  • graphics card
  • DVD disk buffer
  • printers
  • mainframes
  • multimedia computers
  • eDRAM
  • cell phones
  • nonvolatile BIOS memory
  • main computer memory
  • telecommunications

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