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71256S100TDB

71256S100TDB

71256S100TDB

Renesas Electronics America Inc.

Memory IC

SOT-23

71256S100TDB Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 11 Weeks
Mounting Type Through Hole
Package / Case 28-CDIP (0.300, 7.62mm)
Operating Temperature-55°C~125°C TA
PackagingTube
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology SRAM - Asynchronous
Voltage - Supply 4.5V~5.5V
Memory Size256Kb 32K x 8
Memory TypeVolatile
Memory Format SRAM
Memory InterfaceParallel
Write Cycle Time - Word, Page 100ns
RoHS StatusNon-RoHS Compliant
In-Stock:279 items

Pricing & Ordering

QuantityUnit PriceExt. Price
130$22.52877$2928.7401

71256S100TDB Product Details

71256S100TDB Overview


There is a memory type Volatile for this type of device. It comes in a Tube. There is a 28-CDIP (0.300, 7.62mm) case embedded in it. Memory size on the chip is 256Kb 32K x 8. SRAM-format memory is used in this device, which is a mainstream design. A wide operating temperature range makes this device ideal for a variety of demanding applications. A voltage of 4.5V~5.5V can be supplied to memory ics. The recommended mounting type for memory ics is Through Hole.

71256S100TDB Features


Package / Case: 28-CDIP (0.300, 7.62mm)

71256S100TDB Applications


There are a lot of Renesas Electronics America Inc. 71256S100TDB Memory applications.

  • hard disk drive (HDD)
  • DVD disk buffer
  • networking
  • eSRAM
  • supercomputers
  • embedded logic
  • eDRAM
  • cell phones
  • servers
  • workstations,

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