NP32N055SLE-E1-AY datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Renesas Electronics America stock available on our website
SOT-23
NP32N055SLE-E1-AY Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature
175°C TJ
Packaging
Tape & Reel (TR)
Published
1997
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Number of Elements
1
Configuration
Single
Power Dissipation-Max
1.2W Ta 66W Tc
Operating Mode
ENHANCEMENT MODE
Power Dissipation
1.2W
Turn On Delay Time
14 ns
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
24m Ω @ 16A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
2000pF @ 25V
Current - Continuous Drain (Id) @ 25°C
32A Tc
Gate Charge (Qg) (Max) @ Vgs
41nC @ 5V
Rise Time
8ns
Drain to Source Voltage (Vdss)
55V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
7.4 ns
Turn-Off Delay Time
40 ns
Continuous Drain Current (ID)
32A
Gate to Source Voltage (Vgs)
20V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
In-Stock:2555 items
NP32N055SLE-E1-AY Product Details
NP32N055SLE-E1-AY Description
These products are N-channel MOS Field Effect Transistors designed for high-current switching applications.
NP32N055SLE-E1-AY Features
Halogen-free According to IEC 61249-2-21Definition
TrenchFET® Power MOSFET
100 % Rg and UIS Tested
Compliant with RoHS Directive 2002/95/EC
NP32N055SLE-E1-AY Applications
CPU Power Delivery
DC−DC Converters
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