DSA5G01B0L Overview
This device has a DC current gain of 70 @ 1mA 10V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is -100mV, which allows for maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 100mV @ 1mA, 10mA.A -30mA continuous collector voltage is necessary to achieve high efficiency.Emitter base voltages of -5V can achieve high levels of efficiency.Single BJT transistor contains a transSingle BJT transistorion frequency of 300MHz.The breakdown input voltage is 20V volts.A maximum collector current of 30mA volts is possible.
DSA5G01B0L Features
the DC current gain for this device is 70 @ 1mA 10V
a collector emitter saturation voltage of -100mV
the vce saturation(Max) is 100mV @ 1mA, 10mA
the emitter base voltage is kept at -5V
a transition frequency of 300MHz
DSA5G01B0L Applications
There are a lot of Panasonic Electronic Components DSA5G01B0L applications of single BJT transistors.
- Muting
- Inverter
- Driver
- Interface