DSA2002S0L Overview
This device has a DC current gain of 170 @ 150mA 10V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -600mV.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 30mA, 300mA.Maintaining the continuous collector voltage at -500mA is essential for high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.There is a transition frequency of 160MHz in the part.Breakdown input voltage is 50V volts.Maximum collector currents can be below 500mA volts.
DSA2002S0L Features
the DC current gain for this device is 170 @ 150mA 10V
a collector emitter saturation voltage of -600mV
the vce saturation(Max) is 600mV @ 30mA, 300mA
the emitter base voltage is kept at -5V
a transition frequency of 160MHz
DSA2002S0L Applications
There are a lot of Panasonic Electronic Components DSA2002S0L applications of single BJT transistors.
- Muting
- Inverter
- Driver
- Interface
