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TIS97

TIS97

TIS97

ON Semiconductor

TIS97 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

TIS97 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Number of Pins 3
Weight 200mg
Operating Temperature-55°C~150°C TJ
PackagingBulk
Published 2004
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Voltage - Rated DC 40V
Max Power Dissipation625mW
Current Rating500mA
Base Part Number TIS97
Number of Elements 1
Element ConfigurationSingle
Power Dissipation625mW
Transistor Type NPN
Collector Emitter Voltage (VCEO) 40V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 100μA 5V
Current - Collector Cutoff (Max) 10nA ICBO
Collector Emitter Breakdown Voltage40V
Collector Base Voltage (VCBO) 40V
Emitter Base Voltage (VEBO) 6V
hFE Min 250
Height 5.33mm
Length 5.2mm
Width 4.19mm
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:3669 items

TIS97 Product Details

TIS97 Overview


In this device, the DC current gain is 250 @ 100μA 5V, which is the ratio between the base current and the collector current.Keeping the emitter base voltage at 6V allows for a high level of efficiency.This device has a current rating of 500mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.The maximum collector current is 500mA volts.

TIS97 Features


the DC current gain for this device is 250 @ 100μA 5V
the emitter base voltage is kept at 6V
the current rating of this device is 500mA

TIS97 Applications


There are a lot of ON Semiconductor TIS97 applications of single BJT transistors.

  • Driver
  • Interface
  • Inverter
  • Muting

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