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TIS75_D26Z

TIS75_D26Z

TIS75_D26Z

ON Semiconductor

TIS75_D26Z datasheet pdf and Transistors - JFETs product details from ON Semiconductor stock available on our website

SOT-23

TIS75_D26Z Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
PackagingTape & Reel (TR)
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number TIS75
Power - Max 350mW
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 18pF @ 10V VGS
Current - Drain (Idss) @ Vds (Vgs=0) 8mA @ 15V
Voltage - Cutoff (VGS off) @ Id 800mV @ 4nA
Voltage - Breakdown (V(BR)GSS) 30V
Resistance - RDS(On) 60Ohm
In-Stock:2510 items

TIS75_D26Z Product Details

TIS75_D26Z Description

TIS75_D26Z transistor is an N-channel MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes TIS75_D26Z MOSFET suitable for ISM applications in which reliability and durability are essential. ON Semiconductor TIS75_D26Z has the common source configuration.

TIS75_D26Z Features

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

TIS75_D26Z Applications

ISM applications

DC large signal applications

Power factor correction

Electronic lamp ballasts

Flat panel display


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