TIP29B Overview
This device has a DC current gain of 15 @ 1A 4V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is 700mV, which allows for maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 700mV @ 125mA, 1A.A constant collector voltage of 1A is necessary for high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 1A for this device.There is no device package available from the supplier for this product.Detection of Collector Emitter Breakdown at 80V maximal voltage is present.When collector current reaches its maximum, it can reach 1A volts.
TIP29B Features
the DC current gain for this device is 15 @ 1A 4V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 125mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
the supplier device package of TO-220AB
TIP29B Applications
There are a lot of ON Semiconductor TIP29B applications of single BJT transistors.
- Driver
- Interface
- Muting
- Inverter
