TIP102G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 1000 @ 3A 4V.A collector emitter saturation voltage of 2V ensures maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 2.5V @ 80mA, 8A.The emitter base voltage can be kept at 5V for high efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 8A.Single BJT transistor contains a transSingle BJT transistorion frequency of 4MHz.The maximum collector current is 8A volts.
TIP102G Features
the DC current gain for this device is 1000 @ 3A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2.5V @ 80mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 8A
a transition frequency of 4MHz
TIP102G Applications
There are a lot of ON Semiconductor TIP102G applications of single BJT transistors.
- Muting
- Driver
- Interface
- Inverter
