Name: TIG111BF
Brand: ON Semiconductor
SKU: TIG111BF
Availability: InStock

Technical Specifications

Parameter Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Number of Pins	3
Transistor Element Material	SILICON
Packaging	Bulk
Published	2010
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
HTS Code	8541.29.00.95
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	2W
Pin Count	3
Operating Temperature (Max)	150°C
Number of Elements	1
Element Configuration	Single
Case Connection	ISOLATED
Input Type	Standard
Power - Max	2W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	2V
Max Collector Current	23A
JEDEC-95 Code	TO-220AB
Collector Emitter Breakdown Voltage	600V
Turn On Time	250 ns
Test Condition	300V, 10A, 30 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2V @ 15V, 10A
Turn Off Time-Nom (toff)	360 ns
IGBT Type	NPT
Gate Charge	63nC
Current - Collector Pulsed (Icm)	92A
Td (on/off) @ 25°C	43ns/175ns
Gate-Emitter Thr Voltage-Max	6V
Radiation Hardening	No
RoHS Status	RoHS Compliant

TIG111BF Product Details

TIG111BF Description

TIG111BF is a 600v N-channel Non-Punch Through IGBT. The transistor TIG111BF can be applied in high-power high-speed switching applications, such as communication devices, power supplies, telecommunications, measuring equipment, and manufacturing facilities due to the following features. The Operating and Storage Temperature Range is between -55 and 150℃. And the transistor TIG111BF is in the TO-220FI package with 25W power dissipation. Additionally, it is green and compliant with RoHS (Lead-free / RoHS Compliant).