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TIG110BF

TIG110BF

TIG110BF

ON Semiconductor

TIG110BF datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

SOT-23

TIG110BF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Transistor Element Material SILICON
PackagingBulk
Published 2010
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
HTS Code8541.29.00.95
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation2W
Pin Count3
Operating Temperature (Max) 150°C
Number of Elements 1
Element ConfigurationSingle
Case Connection ISOLATED
Input Type Standard
Power - Max 2W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2V
Max Collector Current 27A
JEDEC-95 Code TO-220AB
Collector Emitter Breakdown Voltage600V
Turn On Time300 ns
Test Condition 300V, 15A, 30 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 15A
Turn Off Time-Nom (toff) 450 ns
IGBT Type NPT
Gate Charge95nC
Current - Collector Pulsed (Icm) 108A
Td (on/off) @ 25°C 65ns/250ns
Gate-Emitter Thr Voltage-Max 6V
Radiation HardeningNo
RoHS StatusRoHS Compliant
In-Stock:4102 items

TIG110BF Product Details

TIG110BF Description


These devices, sometimes known as IGBTs, were produced using the cutting-edge and distinctive trench gate fieldstop structure. These parts are from the most recent generation of IGBTs, the HB series, which maximizes the efficiency of any frequency converter by providing the best conduction and switching loss trade-offs.



TIG110BF Features


  • The amplifier has a built-in current limit.

  • Overheating prevention



TIG110BF Applications


Switching applications


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