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SSVMUN5312DW1T2G

SSVMUN5312DW1T2G

SSVMUN5312DW1T2G

ON Semiconductor

Bipolar Transistors - Pre-Biased SS BRT COMPLEMENTARY

SOT-23

SSVMUN5312DW1T2G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 8 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
PackagingTape & Reel (TR)
Published 2007
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number MUN53**DW1
Power - Max 187mW
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 5mA 10V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 300μA, 10mA
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 100mA
Resistor - Base (R1) 22k Ω
Resistor - Emitter Base (R2) 22k Ω
RoHS StatusROHS3 Compliant
In-Stock:1728 items

Pricing & Ordering

QuantityUnit PriceExt. Price

About SSVMUN5312DW1T2G

The SSVMUN5312DW1T2G from ON Semiconductor is a high-performance microcontroller designed for a wide range of embedded applications. This component features Bipolar Transistors - Pre-Biased SS BRT COMPLEMENTARY.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the SSVMUN5312DW1T2G, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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