SS9014BBU Overview
In this device, the DC current gain is 100 @ 1mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.This design offers maximum flexibility with a collector emitter saturation voltage of 140mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 300mV @ 5mA, 100mA.An emitter's base voltage can be kept at 5V to gain high efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.Single BJT transistor is possible to have a collector current as low as 100mA volts at Single BJT transistors maximum.
SS9014BBU Features
the DC current gain for this device is 100 @ 1mA 5V
a collector emitter saturation voltage of 140mV
the vce saturation(Max) is 300mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 100mA
SS9014BBU Applications
There are a lot of ON Semiconductor SS9014BBU applications of single BJT transistors.
- Muting
- Interface
- Driver
- Inverter
