SS8050BBU Overview
This device has a DC current gain of 85 @ 100mA 1V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is 500mV, which allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 6V can result in a high level of efficiency.Its current rating is 1.5A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 190MHz.Single BJT transistor is possible to have a collector current as low as 1.5A volts at Single BJT transistors maximum.
SS8050BBU Features
the DC current gain for this device is 85 @ 100mA 1V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 80mA, 800mA
the emitter base voltage is kept at 6V
the current rating of this device is 1.5A
a transition frequency of 190MHz
SS8050BBU Applications
There are a lot of ON Semiconductor SS8050BBU applications of single BJT transistors.
- Inverter
- Driver
- Interface
- Muting
