SMMUN2233LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from ON Semiconductor stock available on our website
SOT-23
SMMUN2233LT1G Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Lifecycle Status
ACTIVE (Last Updated: 4 days ago)
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Surface Mount
YES
Number of Pins
3
Packaging
Tape & Reel (TR)
Published
2012
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Subcategory
BIP General Purpose Small Signal
Max Power Dissipation
246mW
Base Part Number
MMUN22**L
Pin Count
3
Number of Elements
1
Polarity
NPN
Element Configuration
Single
Halogen Free
Halogen Free
Transistor Type
NPN - Pre-Biased
Collector Emitter Voltage (VCEO)
50V
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 5mA 10V
Current - Collector Cutoff (Max)
500nA
Vce Saturation (Max) @ Ib, Ic
250mV @ 1mA, 10mA
Collector Emitter Breakdown Voltage
50V
Max Breakdown Voltage
50V
hFE Min
80
Resistor - Base (R1)
4.7 k Ω
Resistor - Emitter Base (R2)
47 k Ω
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:24158 items
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Unit Price
Ext. Price
SMMUN2233LT1G Product Details
SMMUN2233LT1G Description
The ON Semiconductor SMMUN2233LT1G is an NPN Bipolar Digital Transistor (BRT) eliminating these individual components by integrating them into a single device.
SMMUN2233LT1G Features
NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101 Qualified and PPAP Capable
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
SMMUN2233LT1G Applications
Power Management
Industrial
Automotive
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