Welcome to Hotenda.com Online Store!

logo
userjoin
Home

SMMUN2111LT1G

  • SMMUN2111LT1G - SMMUN2111LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from ON Semiconductor stock available on our website
  • SMMUN2111LT1G - SMMUN2111LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from ON Semiconductor stock available on our website

SMMUN2111LT1G

SMMUN2111LT1G

ON Semiconductor

SMMUN2111LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from ON Semiconductor stock available on our website

SOT-23

SMMUN2111LT1G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 4 Weeks
Lifecycle Status ACTIVE (Last Updated: 6 days ago)
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface MountYES
Number of Pins 3
PackagingTape & Reel (TR)
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Operating Temperature150°C
Min Operating Temperature -55°C
Additional FeatureBUILT IN BIAS RESISTANCE RATIO IS 1
Subcategory BIP General Purpose Small Signal
Max Power Dissipation246mW
Terminal Position DUAL
Terminal FormGULL WING
Base Part Number MMUN21**L
Pin Count3
Reference Standard AEC-Q101
Number of Elements 1
Polarity PNP
Element ConfigurationSingle
Transistor Application SWITCHING
Halogen Free Halogen Free
Transistor Type PNP - Pre-Biased
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 35 @ 5mA 10V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 300μA, 10mA
Collector Emitter Breakdown Voltage50V
Collector Emitter Saturation Voltage250mV
Max Breakdown Voltage 50V
Collector Base Voltage (VCBO) 50V
hFE Min 35
Resistor - Base (R1) 10 k Ω
Resistor - Emitter Base (R2) 10 k Ω
Height 1.01mm
Length 3.04mm
Width 1.4mm
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:21114 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.33000$0.33
500$0.3267$163.35
1000$0.3234$323.4
1500$0.3201$480.15
2000$0.3168$633.6
2500$0.3135$783.75

SMMUN2111LT1G Product Details

SMMUN2111LT1G Description


The ON Semiconductor SMMUN2111LT1G is a PNP Transistor with a Monolithic Bias Resistor Network



SMMUN2111LT1G Features


  • Simplifies Circuit Design

  • Reduces Board Space

  • Reduces Component Count

  • S and NSV Prefix for Automotive and Other Applications



SMMUN2111LT1G Applications


  • Inverter

  • Interface circuit

  • Driver circuit


Related Products

Similar Transistors - Bipolar (BJT) - Single, Pre-Biased from ON Semiconductor and other manufacturers

DTD113ZCT116 - DTD113ZCT116 datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from ROHM Semiconductor stock available on our website
ROHM Semiconductor

DTD113ZCT116

RN1103MFV,L3F - TRANS PREBIAS NPN 150MW VESM
Toshiba Semiconductor and Storage

RN1103MFV,L3F

DTC124XET1 - TRANS PREBIAS NPN 200MW SC75
ON Semiconductor

DTC124XET1

RN1412,LF - TRANS PREBIAS NPN 50V 0.1A SMINI
Toshiba Semiconductor and Storage

RN1412,LF

ADTA143XUAQ-13 - ADTA143XUAQ-13 datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from Diodes Incorporated stock available on our website
Diodes Incorporated

ADTA143XUAQ-13

DTD713ZMT2L - TRANS PREBIAS NPN 150MW VMT3
ROHM Semiconductor

DTD713ZMT2L

SMMUN2134LT1G - Trans Digital BJT PNP 50V 100mA 3-Pin SOT-23 T/R
ON Semiconductor

SMMUN2134LT1G

DDTA114WCA-7-F - TRANS PREBIAS PNP 200MW SOT23-3
Diodes Incorporated

DDTA114WCA-7-F

PDTC124XM,315 - TRANS PREBIAS NPN 250MW SOT883
Nexperia USA Inc.

PDTC124XM,315

DDTD113ZC-7-F - Trans Digital BJT NPN 40V 500mA Automotive 3-Pin SOT-23 T/R
Diodes Incorporated

DDTD113ZC-7-F

View All Related Products

Get Subscriber

Enter Your Email Address, Get the Latest News