SBC846ALT1G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 110 @ 2mA 5V.A collector emitter saturation voltage of 600mV ensures maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.100MHz is present in the transition frequency.Single BJT transistor can be broken down at a voltage of 65V volts.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
SBC846ALT1G Features
the DC current gain for this device is 110 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
SBC846ALT1G Applications
There are a lot of ON Semiconductor SBC846ALT1G applications of single BJT transistors.
- Muting
- Driver
- Interface
- Inverter
