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RFP8P05

RFP8P05

RFP8P05

ON Semiconductor

RFP8P05 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

RFP8P05 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Surface Mount
Mounting Type Through Hole
Package / Case TO-220-3
PackagingTube
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature175°C
Min Operating Temperature -55°C
Voltage - Rated DC -50V
Max Power Dissipation2.5W
Technology MOSFET (Metal Oxide)
Current Rating-8A
Element ConfigurationSingle
Power Dissipation48W
FET Type P-Channel
Rds On (Max) @ Id, Vgs 300m Ω @ 8A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 8A Tc
Gate Charge (Qg) (Max) @ Vgs 80nC @ 20V
Rise Time30ns
Drain to Source Voltage (Vdss) 50V
Fall Time (Typ) 20 ns
Turn-Off Delay Time 42 ns
Continuous Drain Current (ID) 3.1A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -50V
Input Capacitance420pF
RoHS StatusNon-RoHS Compliant
Lead Free Contains Lead
In-Stock:1259 items

RFP8P05 Product Details

RFP8P05 Description


The RFP8P05 is a P-Channel Power MOSFET manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance.


RFP8P05 Features


  • 8A, 50V

  • rDS(ON) = 0.3Ω

  • UIS SOA Rating Curve

  • SOA is Power Dissipation Limited

  • Nanosecond Switching Speeds

  • Linear Transfer Characteristics

  • High Input Impedance



RFP8P05 Applicaitons


  • Switching regulators

  • Switching converters

  • Motor drivers

  • Relay drivers


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