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RFP3055

RFP3055

RFP3055

ON Semiconductor

RFP3055 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

RFP3055 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220-3
Operating Temperature-55°C~175°C TJ
PackagingTube
Published 2002
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 53W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 150mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 300pF @ 25V
Current - Continuous Drain (Id) @ 25°C 12A Tc
Gate Charge (Qg) (Max) @ Vgs 23nC @ 20V
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
In-Stock:3345 items

RFP3055 Product Details

RFP3055 Description


RFP3055 is a type of N-Channel enhancement-mode silicon gate power field effect transistor provided by ON Semiconductor. It is specifically designed to withstand a specified level of energy in the breakdown avalanche mode of operation. It is well suited for a wide range of applications including switching regulators, switching converters, motor drivers, relay drivers, and more.



RFP3055 Features


  • Low RDS (on)

  • UIS rating curve

  • Available in the TO-251AA package

  • Operating temperature of 175oC

  • Temperature compensating PSPICE? model



RFP3055 Applications


  • Switching regulators

  • Switching converters

  • Motor drivers

  • Relay drivers

  • Drivers for high power bipolar switching transistors


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