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RFD8P05SM

RFD8P05SM

RFD8P05SM

ON Semiconductor

RFD8P05SM datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

RFD8P05SM Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Through Hole
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
PackagingTube
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature175°C
Min Operating Temperature -55°C
Voltage - Rated DC -50V
Max Power Dissipation38W
Technology MOSFET (Metal Oxide)
Current Rating-8A
Element ConfigurationSingle
Power Dissipation48W
FET Type P-Channel
Rds On (Max) @ Id, Vgs 300m Ω @ 8A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 8A Tc
Gate Charge (Qg) (Max) @ Vgs 80nC @ 20V
Rise Time30ns
Drain to Source Voltage (Vdss) 50V
Fall Time (Typ) 20 ns
Turn-Off Delay Time 42 ns
Continuous Drain Current (ID) 11A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -50V
Input Capacitance350pF
RoHS StatusNon-RoHS Compliant
Lead Free Contains Lead
In-Stock:1143 items

RFD8P05SM Product Details

RFD8P05SM Description


The RFD8P05SM is a P-Channel power MOSFET made with MegaFET technology. This method, which employs feature sizes similar to those used in LSI circuits, maximizes silicon utilization, resulting in a remarkable performance.



RFD8P05SM Features


  • Nanosecond Switching Speeds

  • Linear Transfer Characteristics

  • High Input Impedance

  • 8A, 50V

  • rDS(ON) = 0.300?

  • UIS SOA Rating Curve

  • SOA is Power Dissipation Limited



RFD8P05SM Applications


  • Switching regulators

  • Switching converters

  • Motor

  • drivers

  • Relay drivers


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