RFD10P03LSM

RFD10P03LSM Description

The RFD10P03LSM from ON Semiconductor is a P-Channel power MOSFET built utilizing the MegaFET process. This method, which employs feature sizes similar to those used in LSI circuits, maximizes silicon utilization, resulting in a remarkable performance.

RFD10P03LSM Features

• Temperature Compensating PSPICE Model

• PSPICE Thermal Model

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• 10A, 30V

• r_DS(ON) = 0.200Ω

• 175℃ Operating Temperature

RFD10P03LSM Applications

• Motor drivers

• Relay drivers

• Switching regulators

• Switching converters