RB751V40T1G Overview
A reverse leakage current of 500nA volts can be generated by this device.A rectified current of 30mA volts is averaged for this device.Electronic or electrical devices produce heat as unwelcome byproducts of their primary functions.The allowable value of forward current reaches 30mA.Fuse elements have an indefinite life expectancy of 30mA, which is the maximum current that the fuse can carry for an indefinite period of time.Surge current can reach maximum value 500mA.This device can deliver a value of 2.5pF depending on the capacitance.Based on the data charts in the datasheets, the peak reverse is 500nA.A diode's breakdown voltage indicates the maximum reverse voltage that can be applied without causing an exponential increase in leakage current in the diode, and its breakdown voltage is 30V.
RB751V40T1G Features
a maximal reverse leakage current of 500nA volts
an average rectified current of 30mA volts
a current rating of 30mA
the peak reverse is 500nA
the breakdown voltage of a diode is 30V
RB751V40T1G Applications
There are a lot of ON Semiconductor RB751V40T1G applications of single-phase diode rectifier.
- Switching Diode
- Reverse Polarity Protection
- Power converters
- DC motor control and drives
- Freewheeling
- Polarity Protection Diode
- Battery chargers
- Welders
- Recirculating Diode
- Ultra High-Speed Switching
