PN200 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 150mA 1V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 400mV @ 20mA, 200mA.Emitter base voltages of 6V can achieve high levels of efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -500mA.Single BJT transistor comes in a supplier device package of TO-92-3.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.In extreme cases, the collector current can be as low as 500mA volts.
PN200 Features
the DC current gain for this device is 100 @ 150mA 1V
the vce saturation(Max) is 400mV @ 20mA, 200mA
the emitter base voltage is kept at 6V
the current rating of this device is -500mA
the supplier device package of TO-92-3
PN200 Applications
There are a lot of ON Semiconductor PN200 applications of single BJT transistors.
- Driver
- Inverter
- Muting
- Interface
