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NVMJS0D9N04CLTWG

  • NVMJS0D9N04CLTWG - NVMJS0D9N04CLTWG datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
  • NVMJS0D9N04CLTWG - NVMJS0D9N04CLTWG datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

NVMJS0D9N04CLTWG

NVMJS0D9N04CLTWG

ON Semiconductor

NVMJS0D9N04CLTWG datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

NVMJS0D9N04CLTWG Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 33 Weeks
Mounting Type Surface Mount
Package / Case 8-PowerSMD, Gull Wing
Operating Temperature-55°C~175°C TJ
PackagingTape & Reel (TR)
Series Automotive, AEC-Q101
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Power Dissipation-Max 3.8W Ta 167W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 0.82m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 2V @ 190μA
Input Capacitance (Ciss) (Max) @ Vds 8862pF @ 25V
Current - Continuous Drain (Id) @ 25°C 50A Ta 330A Tc
Gate Charge (Qg) (Max) @ Vgs 143nC @ 10V
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
In-Stock:2477 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$2.50000$2.5
500$2.475$1237.5
1000$2.45$2450
1500$2.425$3637.5
2000$2.4$4800
2500$2.375$5937.5

NVMJS0D9N04CLTWG Product Details

NVMJS0D9N04CLTWG Features

Small Footprint (5x6 mm) for Compact Design

Low RDS(on) to Minimize Conduction Losses

Low QG and Capacitance to Minimize Driver Losses

LFPAK8 Package, Industry Standard

AEC−Q101 Qualified and PPAP Capable

These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant


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