NVMFD5C478NLT1G Description
Power MOSFET is a specific type of metal oxide semiconductor field effect transistor (MOSFET) designed to handle significant power levels. Compared with other new power semiconductor devices, such as insulated gate bipolar transistor (IGBT) or thyristor, its main advantages are fast switching speed and high efficiency at low voltage. It shares an isolation door with IGBT, making it easier to drive. They may be affected by low gain, sometimes to the extent that the gate voltage needs to be higher than the controlled voltage.
NVMFD5C478NLT1G Features
? Small Footprint (5 x 6 mm) for Compact Design
? Low RDS(on) to Minimize Conduction Losses
? Low Capacitance to Minimize Driver Losses
? NVMFD5C478NLWF ? Wettable Flanks Product
? AEC?Q101 Qualified and PPAP Capable
? These Devices are Pb?Free and are RoHS Compliant
NVMFD5C478NLT1G Applications
insulated gate bipolar transistor
