NVHL025N65S3 Description
The all-new high voltage super-junction (SJ) NVHL025N65S3 MOSFET family from ON Semiconductor uses charge balance technology to achieve exceptional low on-resistance and lower gate charge performance. With this cutting-edge technology, conduction loss is reduced, switching performance is improved, and it can withstand highly high dv/dt rates. As a result, the NVHL025N65S3 MOSFET Easy-drive series makes design implementation simpler and aids in EMI management.
NVHL025N65S3 Features
AEC?Q101 Qualified
100% Avalanche Tested
Max Junction Temperature 150°C
Typ. RDS(on) = 19.9 mΩ
Ultra-Low Gate Charge (Typ. QG = 236 nC)
Low Effective Output Capacitance (Typ. COSS(eff.) = 2062 pF)
These Devices are Pb?Free and are RoHS Compliant
NVHL025N65S3 Applications
