Welcome to Hotenda.com Online Store!

logo
userjoin
Home

NVD5862NT4G

NVD5862NT4G

NVD5862NT4G

ON Semiconductor

MOSFET N-CH 60V 90A DPAK-4

SOT-23

NVD5862NT4G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 16 Weeks
Lifecycle Status LIFETIME (Last Updated: 1 day ago)
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface MountYES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTape & Reel (TR)
Published 2010
JESD-609 Code e3
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal FormGULL WING
Pin Count3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 4.1W Ta 115W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation4.1W
Case Connection DRAIN
Turn On Delay Time18 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 5.7m Ω @ 48A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 6000pF @ 25V
Current - Continuous Drain (Id) @ 25°C 18A Ta 98A Tc
Gate Charge (Qg) (Max) @ Vgs 82nC @ 10V
Rise Time70ns
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 60 ns
Turn-Off Delay Time 35 ns
Continuous Drain Current (ID) 18A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 98A
Drain-source On Resistance-Max 0.0057Ohm
DS Breakdown Voltage-Min 60V
Avalanche Energy Rating (Eas) 205 mJ
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:3524 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$6.754443$6.754443
10$6.372116$63.72116
100$6.011430$601.143
500$5.671161$2835.5805
1000$5.350152$5350.152

About NVD5862NT4G

The NVD5862NT4G from ON Semiconductor is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 60V 90A DPAK-4.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the NVD5862NT4G, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

Get Subscriber

Enter Your Email Address, Get the Latest News