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NVB25P06T4G

NVB25P06T4G

NVB25P06T4G

ON Semiconductor

MOSFET P-CH 60V 27.5A D2PAK

SOT-23

NVB25P06T4G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE, NOT REC (Last Updated: 6 days ago)
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface MountYES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTape & Reel (TR)
Published 2012
JESD-609 Code e3
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code8541.29.00.95
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal FormGULL WING
Pin Count3
Reference Standard AEC-Q101
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 120W Tj
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time14 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 82m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1680pF @ 25V
Current - Continuous Drain (Id) @ 25°C 27.5A Ta
Gate Charge (Qg) (Max) @ Vgs 50nC @ 10V
Rise Time72ns
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±15V
Polarity/Channel Type N-CHANNEL
Fall Time (Typ) 190 ns
Turn-Off Delay Time 43 ns
Continuous Drain Current (ID) 27.5A
Gate to Source Voltage (Vgs) 15V
Drain-source On Resistance-Max 0.082Ohm
Pulsed Drain Current-Max (IDM) 80A
DS Breakdown Voltage-Min 60V
Avalanche Energy Rating (Eas) 600 mJ
Radiation HardeningNo
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:2515 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$9.650694$9.650694
10$9.104428$91.04428
100$8.589084$858.9084
500$8.102909$4051.4545
1000$7.644253$7644.253

About NVB25P06T4G

The NVB25P06T4G from ON Semiconductor is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET P-CH 60V 27.5A D2PAK.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the NVB25P06T4G, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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