Name: NTS4001NT1G
Brand: ON Semiconductor
SKU: NTS4001NT1G
Price: 0.41000 USD
Availability: InStock

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NTS4001NT1G

Manufacturer part number:NTS4001NT1G

Manufacturer:ON Semiconductor

Description:NTS4001NT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:NTS4001NT1G Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	10 Weeks
Lifecycle Status	ACTIVE (Last Updated: 3 days ago)
Contact Plating	Tin
Mounting Type	Surface Mount
Package / Case	SC-70, SOT-323
Surface Mount	YES
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	1997
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	1Ohm
Subcategory	FET General Purpose Power
Voltage - Rated DC	30V
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	270mA
[email protected] Reflow Temperature-Max (s)	40
Pin Count	3
Number of Elements	1
Power Dissipation-Max	330mW Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	330mW
Turn On Delay Time	17 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.5 Ω @ 10mA, 4V
Vgs(th) (Max) @ Id	1.5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds	33pF @ 5V
Current - Continuous Drain (Id) @ 25°C	270mA Ta
Gate Charge (Qg) (Max) @ Vgs	1.3nC @ 5V
Rise Time	23ns
Drive Voltage (Max Rds On,Min Rds On)	2.5V 4V
Vgs (Max)	±20V
Fall Time (Typ)	23 ns
Turn-Off Delay Time	94 ns
Continuous Drain Current (ID)	270mA
Threshold Voltage	1.2V
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	0.27A
Drain to Source Breakdown Voltage	30V
Nominal Vgs	1.2 V
Height	900μm
Length	2.2mm
Width	1.35mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

NTS4001NT1G Product Details

NTS4001NT1G Description

NTS4001NT1G MOSFET has much superior body diode reverse recovery performance. NTS4001NT1G circuit can remove additional component and improve system reliability in certain applications that require performance improvement of the MOSFET’s body diode. NTS4001NT1G ON Semiconductor is suitable for Buck Converters, Low Side Load Switch, Level Shifts, Battery Supplied Devices.