NTR4502PT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
NTR4502PT1G Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
13 Weeks
Lifecycle Status
ACTIVE (Last Updated: 4 days ago)
Contact Plating
Tin
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Surface Mount
YES
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Cut Tape (CT)
Published
2009
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
155MOhm
Subcategory
Other Transistors
Voltage - Rated DC
-30V
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
-1.95A
[email protected] Reflow Temperature-Max (s)
40
Pin Count
3
Number of Elements
1
Power Dissipation-Max
400mW Tj
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
1.25W
Turn On Delay Time
5.2 ns
FET Type
P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
200m Ω @ 1.95A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
200pF @ 15V
Current - Continuous Drain (Id) @ 25°C
1.13A Ta
Gate Charge (Qg) (Max) @ Vgs
10nC @ 10V
Rise Time
12ns
Drain to Source Voltage (Vdss)
30V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
12 ns
Turn-Off Delay Time
19 ns
Continuous Drain Current (ID)
1.95A
Threshold Voltage
-3V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
-30V
Nominal Vgs
-3 V
Height
1mm
Length
2.9mm
Width
1.3mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:11910 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.53000
$0.53
500
$0.5247
$262.35
1000
$0.5194
$519.4
1500
$0.5141
$771.15
2000
$0.5088
$1017.6
2500
$0.5035
$1258.75
NTR4502PT1G Product Details
NTR4502PT1G Description
NTR4502PT1G belongs to the family of P-channel power MOSFETs manufactured by ON Semiconductor based on the leading planar technology for low gate charge and fast switching. It is able to reduce conduction losses based on its low RDS (on). Its SOT-23 package is used to save board space.
NTR4502PT1G Features
Low RDS (on)
High efficiency
Low-voltage gate drive
Leading planar technology
Available in the SOT-23 package
NTR4502PT1G Applications
DC to DC conversion
Battery charging circuits
Load/Power switch for portables and computing
Motherboard, notebooks, camcorders, digital cameras, etc.
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