NTP6413ANG Description
This HEXFET? Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175??C junction operating temperature, fast switching speed, and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in various applications.
NTP6413ANG Features
Low RDS(on)
High Current Capability
100% Avalanche Tested
NVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC?Q101
Qualified and PPAP Capable
These Devices are Pb?Free and are RoHS Compliant
