NTP52N10 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
NTP52N10 Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
2006
JESD-609 Code
e0
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
Tin/Lead (Sn80Pb20)
HTS Code
8541.29.00.95
Subcategory
FET General Purpose Power
Voltage - Rated DC
100V
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
240
Reach Compliance Code
not_compliant
Current Rating
52A
[email protected] Reflow Temperature-Max (s)
30
Pin Count
3
JESD-30 Code
R-PSFM-T3
Qualification Status
Not Qualified
Number of Elements
1
Power Dissipation-Max
214W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
214W
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
30m Ω @ 26A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
3150pF @ 25V
Current - Continuous Drain (Id) @ 25°C
60A Ta
Gate Charge (Qg) (Max) @ Vgs
135nC @ 10V
Rise Time
95ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
100 ns
Turn-Off Delay Time
74 ns
Continuous Drain Current (ID)
60A
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
20V
Drain-source On Resistance-Max
0.03Ohm
Drain to Source Breakdown Voltage
100V
Pulsed Drain Current-Max (IDM)
156A
Avalanche Energy Rating (Eas)
800 mJ
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead
In-Stock:2747 items
NTP52N10 Product Details
IRL2910SPBF Description
The IRL2910SPBF is a HEXFET? fifth generation single N-channel Power MOSFET utilizing advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation. The surface-mount power package is capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible ON-resistance in any existing surface-mount package. The IRL2910SPBF is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2W in a typical surface-mount application.
IRL2910SPBF Features
Logic-Level Gate Drive
Surface Mount
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
Fast Switching
Fully Avalanche Rated
Lead-Free
IRL2910SPBF Applications
Induction furnaces
Arc furnaces and arc welders
Steel rolling mills
Large motors with periodic loading
Thyristor drives
Railway traction which is mostly through d.c. drives
Related Products
Similar Transistors - FETs, MOSFETs - Single from ON Semiconductor and other manufacturers