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NTMSD6N303R2

NTMSD6N303R2

NTMSD6N303R2

ON Semiconductor

MOSFET N-CH 30V 6A 8-SOIC

SOT-23

NTMSD6N303R2 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Lifecycle Status OBSOLETE (Last Updated: 1 week ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2009
Series FETKY™
JESD-609 Code e0
Pbfree Code no
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Subcategory FET General Purpose Power
Voltage - Rated DC 30V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 240
Reach Compliance Code not_compliant
Current Rating6A
[email protected] Reflow Temperature-Max (s) 30
Pin Count8
Qualification StatusNot Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2W Ta
Operating ModeENHANCEMENT MODE
Power Dissipation2W
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 32m Ω @ 6A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 950pF @ 24V
Current - Continuous Drain (Id) @ 25°C 6A Ta
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Rise Time22ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 45 ns
Turn-Off Delay Time 45 ns
Continuous Drain Current (ID) 6A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 6A
Drain-source On Resistance-Max 0.032Ohm
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 30A
Avalanche Energy Rating (Eas) 325 mJ
FET Feature Schottky Diode (Isolated)
RoHS StatusNon-RoHS Compliant
Lead Free Contains Lead
In-Stock:39086 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.218785$1.218785
10$1.149797$11.49797
100$1.084714$108.4714
500$1.023315$511.6575
1000$0.965392$965.392

About NTMSD6N303R2

The NTMSD6N303R2 from ON Semiconductor is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 30V 6A 8-SOIC.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the NTMSD6N303R2, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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