Name: NTMS5838NLR2G
Brand: ON Semiconductor
SKU: NTMS5838NLR2G
Price: 0.17000 USD
Availability: InStock

new-10%

NTMS5838NLR2G

Manufacturer part number:NTMS5838NLR2G

Manufacturer:ON Semiconductor

Description:NTMS5838NLR2G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:NTMS5838NLR2G Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Lifecycle Status	LAST SHIPMENTS (Last Updated: 1 day ago)
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Surface Mount	YES
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2011
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Pin Count	8
Number of Elements	1
Power Dissipation-Max	1.5W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.5W
Turn On Delay Time	11 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	25m Ω @ 7A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	785pF @ 20V
Current - Continuous Drain (Id) @ 25°C	5.8A Ta
Gate Charge (Qg) (Max) @ Vgs	17nC @ 10V
Rise Time	23ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	4 ns
Turn-Off Delay Time	17 ns
Continuous Drain Current (ID)	5.8A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	7.5A
Drain to Source Breakdown Voltage	40V
Height	1.5mm
Length	5mm
Width	4mm
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free

NTMS5838NLR2G Product Details

NTMS5838NLR2G Description

NTMS5838NLR2G belongs to the family of power MOSFET provided by ON Semiconductor. It uses the gate voltage to control the drain current. Power MOSFET NTMS5838NLR2G is specifically optimized for low RDS (on), low capacitance, and low gate charge. Based on its high quality and reliable performance, it is well suited for various power electronic equipment.