NTMS4176PR2G Description
Power MOSFETNTMS4176PR2G is a specific type of metal oxide semiconductor field effect transistor (MOSFET) designed to handle significant power levels. Compared with other new power semiconductor devices, such as insulated gate bipolar transistor (IGBT) or thyristor, its main advantages are fast switching speed and high efficiency at low voltage. It shares an isolation door with IGBT, making it easier to drive. They may be affected by low gain, sometimes to the extent that the gate voltage needs to be higher than the controlled voltage.
NTMS4176PR2G Features
?Low RDS(on) to Minimize Conduction Losses
?Low Capacitance to Minimize Driver Losses
?Optimized Gate Charge to Minimize Switching Losses
?SOIC-8 Surface Mount Package Saves Board Space
?This is a Pb-Free Device
NTMS4176PR2G Applications
?Load Switches
?Notebook PC's
?Desktop PC's
